Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-02
2011-08-02
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S255000, C438S030000, C438S152000, C438S155000, C257S043000, C257S059000, C257S098000, C257S309000
Reexamination Certificate
active
07989815
ABSTRACT:
The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first wiring layer and a second wiring layer which are over the gate insulating film and whose end portions overlap with the gate electrode; and an oxide semiconductor layer which is over the gate electrode and in contact with the gate insulating film and the end portions of the first wiring layer and the second wiring layer. The gate electrode of the non-linear element and a scan line or a signal line is included in a wiring, the first or second wiring layer of the non-linear element is directly connected to the wiring so as to apply the potential of the gate electrode.
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Fortunato.E et al., “Wide-Bandgap High-Mobility ZNO Thin-Film Transistors
Akimoto Kengo
Futamura Tomoya
Kasahara Takahiro
Komori Shigeki
Uochi Hideki
Richards N Drew
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Singal Ankush k
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