Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-07-26
2011-07-26
Stark, Jarrett J (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE29003
Reexamination Certificate
active
07985968
ABSTRACT:
Disclosed herein is a display device including: a support substrate; a drive circuit provided on the support substrate; an interlayer insulating film which covers the drive circuit; organic field light-emitting elements arranged in a display region on the interlayer insulating film; and a lead-out wiring extended from the organic field light-emitting elements to a peripheral region around the display region, wherein the interlayer insulating film includes a laminated film made up of an inorganic insulating film and organic insulating film stacked in this order, the organic insulating film has an isolation trench which surrounds the display region, the isolation trench being devoid of the organic insulating film and having the inorganic insulating film at its bottom, and the drive circuit and lead-out wiring are insulated from each other by the inorganic insulating film where the lead-out wiring crosses the isolation trench.
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patent: 2008/0252839 (2008-10-01), Nakadaira
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Japanese Office Action issued on Aug. 25, 2009 in connection with JP Application No. 2007-271891.
Uchino Katsuhide
Yamamoto Tetsuro
SNR Denton US LLP
Sony Corporation
Stark Jarrett J
Tynes, Jr. Lawrence
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