Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1996-11-18
1999-09-14
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257 59, 257 72, 257350, 257641, H01L 2358, H01L 2904, H01L 2701
Patent
active
059527080
ABSTRACT:
A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.
REFERENCES:
patent: 5289016 (1994-02-01), Noguchi
patent: 5495353 (1996-02-01), Yamazaki
patent: 5731628 (1998-03-01), Terashima
patent: 5844254 (1998-12-01), Manning et al.
Ngo Ngan V.
Semiconductor Energy Laboratory Co,. Ltd.
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