Dispersion of nanowires of semiconductor material

Details Dispersion of nanowires of semiconductor material Dispersion of nanowires of semiconductor material

2008-04-15

2008-04-15

Ahmed, Shamim (Department: 1792)

Etching a substrate: processes

Etching to produce porous or perforated article

C216S013000, C216S049000, C205S324000, C438S691000

Reexamination Certificate

active

07357877

ABSTRACT:
A method of manufacturing nanowires (104) is provided, according to which method the nanowires are prepared by anodic etching a semiconductor substrate (10) with an alternating current density, so as to create first regions (4) and second regions (5) with different diameters. Thereafter, the diameters are reduced by preferably repeated oxidation and etching. Finally, the nanowires (104) are dispersed in a dispersion by ultrasonic vibration, through which the coupled nanowires split into individual nanowires of substantially uniform length. The nanowires may then be provided with a surface layer of a suitable material, for instance a luminescent material.

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