Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-06-26
2008-08-12
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280, C365S233100
Reexamination Certificate
active
07411831
ABSTRACT:
The present invention is directed to largely reduce peak current at the time of operation of a boosting circuit provided for an EEPROM. In the erase/write operation, first, a low-frequency clock signal as a selection clock signal is input by a low-frequency clock control signal to a charge pump. After lapse of a certain period (about ⅓ of fall time), a high-frequency clock signal having a frequency higher than that of the low-frequency clock signal is output by a high-frequency clock control signal and is input as the selection clock signal to the charge pump to boost a voltage to a predetermined voltage level. In such a manner, while suppressing the peak of consumption current, the fall time of the boosted voltage can be shortened.
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patent: 6560145 (2003-05-01), Martines et al.
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patent: 2002-109894 (2002-04-01), None
patent: WO 02/19342 (2002-03-01), None
Kawajiri Yoshiki
Terasawa Masaaki
Yamazoe Takanori
Ho Hoai V
Miles & Stockbridge P.C.
Renesas Technology Corp.
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