Discrete semiconductor device having polymer resin as insulator

Chemistry of carbon compounds – Miscellaneous organic carbon compounds – C-metal

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260 78TF, 357 68, 357 71, 357 72, H01L 2330

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active

040178862

ABSTRACT:
Disclosed is a discrete semiconductor device comprising a Si body having an emitter region, a base region and a collector region, an SiO.sub.2 layer disposed on the surface of the body, a polyimide resin having a thickness of 5 .mu. disposed on the SiO.sub.2 layer, electrodes penetrating through the SiO.sub.2 layer and the polyimide resin thereby contacting the emitter region and the base region, respectively and extending on the surface of the polyimide resin, whereby it becomes easy to bond a wire connected to an external electrode with the electrodes.

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patent: 3801880 (1974-04-01), Harada et al.
Hibberd, Integrated Circuits, (TI Electronics Series, McGraw-Hill, N. Y. 1969), pp. 22-23.
Noll, Chemistry and Technology of Silicones, (Academic Press, N. Y., 1968), pp. 582-584.

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