Discrete polymer memory array and method of making same

Details Discrete polymer memory array and method of making same Discrete polymer memory array and method of making same

2005-02-22

2005-02-22

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

C257S295000, C257S314000, C438S003000, C438S099000, C438S407000

Reexamination Certificate

active

06858862

ABSTRACT:
The invention relates to discrete, spaced-apart ferroelectric polymer memory device embodiments. The ferroelectric polymer memory device is fabricated by spin-on polymer processing and etching using photolithographic technology. The size of the discrete, spaced-apart ferroelectric polymer structures may be tied to a specific photolithography minimum feature dimension.The invention also relates to a process for making embodiments of a polymer memory device that includes discrete, spaced-apart ferroelectric polymer structures. The discrete, spaced-apart ferroelectric polymer structures may have a minimum feature that is tied to the current photolithography that may reduce the voltage and increase the switching speed.

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