Discrete on-chip SOI resistors

Details Discrete on-chip SOI resistors Discrete on-chip SOI resistors

2008-05-20

2008-05-20

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Resistor

C257SE21363, C257SE27047, C257SE21022, C257SE21016

Reexamination Certificate

active

07375000

ABSTRACT:
A semiconductor resistor, method of making the resistor and method of making an IC including resistors. Buried wells are formed in the silicon substrate of a silicon on insulator (SOI) wafer. At least one trench is formed in the buried wells. Resistors are formed along the sidewalls of the trench and, where multiple trenches form pillars, in the pillars between the trenches by doping the sidewalls with an angled implant. Resistor contacts are formed to the buried well at opposite ends of the trenches and pillars, if any.

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