Discrete, fixed-value capacitor

Details Discrete, fixed-value capacitor Discrete, fixed-value capacitor

1977-01-14

1978-08-01

Goldberg, Elliot A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361306, 361313, H01G 101

Patent

active

041046978

ABSTRACT:
An axial-lead fixed-value capacitor comprising a metal-nitride-oxide-silicon chip in a standard diode package has been fabricated, having capacitance values in the 10 to 1000 pico-farad range. The device features a beveled-edge configuration which contributes to a low leakage current and also facilitates the sealing of the semiconductor chip in a double plug axial-lead package. The double layer dielectric medium comprises a thermally grown silicon oxide film typically 450 angstroms thick, for example, and a plasma deposited layer of silicon nitride typically 350 angstroms thick, for example.

REFERENCES:
patent: 3321683 (1967-05-01), Tatem
patent: 4015175 (1977-03-01), Kendall et al.

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