Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Reexamination Certificate
2006-02-28
2006-02-28
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
C257S655000
Reexamination Certificate
active
07005725
ABSTRACT:
An electric component comprising an assembly of two PIN diodes in series formed in a semiconductor substrate layer separated from a support layer by an insulating layer, the doped areas forming the electrodes of each diode having a depth equal to that of the substrate layer, the component including a first area of a first doping type surrounded with a second intrinsic area, itself surrounded with a third area of a second doping type, the third area being surrounded with a fourth area of the first doping type, the fourth area being surrounded with a fifth intrinsic area, itself surrounded with a sixth area of the second doping type, the third and fourth areas being covered and connected by a metal area, each of the first and sixth areas being connected to a contact pad on which rests a welding ball.
REFERENCES:
patent: 3686684 (1972-08-01), Matsushita et al.
patent: 3710206 (1973-01-01), Matsushita
patent: 4182965 (1980-01-01), Pfleiderer
French Search Report from French Patent Application 02/16809, filed Dec. 27, 2002.
Jorgenson Lisa K.
Morris James H.
Potter Roy
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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