Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2005-03-22
2005-03-22
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S686000, C257S685000, C257S723000, C257S777000, C257S684000, C257S796000, C257S730000, C257S725000, C257S728000, C257S733000, C257S678000, C257S696000, C361S773000, C361S772000, C361S783000, C361S748000, C361S807000, C439S068000, C439S072000, C439S078000, C439S082000, C439S083000
Reexamination Certificate
active
06870261
ABSTRACT:
A discrete circuit component having an up-right circuit die with lateral electrical connections. The component comprises a substrate having a pair of electrically conductive traces, and a circuit die is planted between the pair of consecutive traces, wherein one electrode of the circuit die on the surface thereof vertical to the substrate is electrically bonded to one of the conductive trace immediately next thereto, while the other electrode of the circuit die on the opposite surface thereof vertical to the substrate is electrically bonded to the other of the pair of conductive traces immediately next thereto. A body of electrical insulation material hermetically seals the circuit die, and a pair of surface electrodes formed on the surface of the body of insulation material are each electrically connected to the corresponding one of the pair of electrically conductive traces extending from the circuit die.
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Chen Pan-Nan
Chen Wen-Long
Hu Chih-Liang
Liang Ming-Chong
Yu Cheen-Hai
Comchip Technology Co., Ltd.
Jiang Chyun IP Office
Williams Alexander Oscar
LandOfFree
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