Disconnectable thyristor

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307633, H01L 2974

Patent

active

048841145

ABSTRACT:
A thyristor has a semiconductor member with a pnpn-layer sequence, a plurality of n(p)-emitter parts, and switching transistors arranged at the edges of the n(p)-emitter parts. The switching transistors respectively include a p(n) semiconductor zone inserted in one of the n(p)-emitter parts, a partial zone of the p(n)-base, and an intermediately disposed channel zone covered by an insulated gate. Rapid and effective reduction of the electron-hole plasma flooding the p-base and n-base during quenching of the thyristor is achieved by a current source connected between electrodes for the p(n) semiconductor zones and a cathode (anode) feed line, the current source delivering an extraction current pulse.

REFERENCES:
patent: 3343104 (1967-09-01), Motto, Jr.
patent: 4298809 (1981-11-01), Onda et al.
patent: 4352028 (1982-09-01), Voss
patent: 4454527 (1984-06-01), Patalong

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