Disconnectable power semiconductor component

Details Disconnectable power semiconductor component Disconnectable power semiconductor component

1988-01-27

1989-05-09

Wojciechowicz, Edward J.

357 38, 357 55, 357 89, 357 90, H01L 2978

Patent

active

048293482

ABSTRACT:
A field-controlled thyristor having a sequence of layers consisting of anode layer, channel layer and gate regions and cathode regions, which regions are alternately arranged at the cathode side, wherein an improvement in the turn-off gain is achieved by a p-type doping of the side walls of the troughs which separate the cathode regions from each other, and/or by an additional intermediate layer which has low p-type doping and which is arranged between adjacent gate regions.

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patent: 4651035 (1987-03-01), Shigekane
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