Discharge element for charge-integrating preamplifier

Details Discharge element for charge-integrating preamplifier Discharge element for charge-integrating preamplifier

1998-09-09

1999-11-23

Pascal, Robert

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330308, 250214A, H03F 316, H01J 4014

Patent

active

059907452

ABSTRACT:
The input of a source-follower, or equivalent amplifier sub-circuit, utilizing a low-transconductance, low-reverse-leakage, low-capacitance, junction field-effect transistor, with its gate-source junction forward biased, is directly connected to the input of a charge-integrating preamplifier. This provides an attractive alternative to a high-ohm resistor which is typically used as a discharge element in low-noise charge-integrating preamplifiers in nuclear-particle, x-ray, and gamma-ray spectroscopy.

REFERENCES:
patent: 3972004 (1976-07-01), Libs
patent: 4174503 (1979-11-01), Merklinger et al.
patent: 4620321 (1986-10-01), Chown
patent: 4888562 (1989-12-01), Edler
patent: 5322995 (1994-06-01), Ohkawa et al.
patent: 5347231 (1994-09-01), Bertuccio et al.
patent: 5801588 (1998-09-01), Nishiyama
Fazzi, et al Charge-Sensitive Amplifier Front-End with an MJFET and a Forward-Biased Reset Diode IEEE Trans Nucl. Sci. vol. 43, #6 Dec. 1996.

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