Discharge device and method for use in processing semiconductor

Details Discharge device and method for use in processing semiconductor Discharge device and method for use in processing semiconductor

1982-03-11

1984-07-03

Paschall, M. H.

Electric heating

Metal heating

Cutting or disintegrating

219 69R, 219121EK, 219 69M, 269903, 29586, 29584, B01J 1700, B23P 100

Patent

active

044581297

ABSTRACT:
An electrical discharge is applied to a wafer mounted in a wafer holder. The wafer includes at least one conducting region covered by an insulating layer. The discharge causes a conductive channel from the conductive region through the insulating layer. The conductive channel provides a relatively low impedance path suitable for conducting away electrons which are injected into the region during processing steps such as electron beam exposure.

REFERENCES:
patent: 3324276 (1967-06-01), Osenbrugger et al.
patent: 3646305 (1972-02-01), Schmidtke et al.
patent: 3851382 (1974-12-01), Stork
patent: 3875416 (1975-01-01), Spicer
patent: 4060888 (1977-12-01), Bottom et al.
Metals Handbook, "Electron Beam Welding", p. 545, vol. 6, 8 Edition, 5-1974.

Affiliated with

Also associated with

Rating

Discharge device and method for use in processing semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Discharge device and method for use in processing semiconductor , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Discharge device and method for use in processing semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1631810