Directly heatable semiconductor tubular bodies

Details Directly heatable semiconductor tubular bodies Directly heatable semiconductor tubular bodies

1978-10-11

1982-08-17

Dixon, Jr., William R.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219301, 219553, 338330, 338334, 428 36, F27B 514, H05B 310, H01C 114

Patent

active

043451420

ABSTRACT:
Directly heatable tubular semiconductor bodies are produced by pyrolytically depositing a continuous layer of silicon or silicon carbide from a thermally decomposable silicon compound onto a heated graphite mandrel, non-destructively removing the so-deposited tubular body from the mandrel, applying a dopant-containing lacquer or the like onto select outer surface portions of such tubular body and subjecting the so-coated tubular body to diffusion conditions sufficient to dope the select outer body portions of the body and render such body directly heatable via an applied electrical current.

REFERENCES:
patent: 2910664 (1959-10-01), Lanning
patent: 3834939 (1974-09-01), Beyer
patent: 3899557 (1975-08-01), Dietze
patent: 3962670 (1976-06-01), Dietze
patent: 3974561 (1976-08-01), Schnoeller
patent: 3984267 (1976-10-01), Craford

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