Direct-write silicon nitride EEPROM cell

Details Direct-write silicon nitride EEPROM cell Direct-write silicon nitride EEPROM cell

1984-10-29

1986-10-07

James, Andrew J.

357 54, H01L 2978

Patent

active

046162453

ABSTRACT:
An EEPROM cell which is programmed to a 1 or .0. binary state regardless of the prior state of the cell, that is, without erasing. The cell construction includes silicon nitride capacitors between the floating gate and the programming electrodes which enhances the programming characteristics and the endurance and permits the use of a relatively simple double layer polysilicon process and semiconductor structure.

REFERENCES:
patent: 4099196 (1978-07-01), Simko
patent: 4274012 (1981-06-01), Simko
patent: 4314265 (1982-02-01), Simko
patent: 4334292 (1982-06-01), Kotecha
patent: 4486769 (1984-12-01), Simko
patent: 4532535 (1985-07-01), Gerber et al.
Sze, S. M., Physics of Semiconductor Devices, Wiley, New York, 1981, pp. 402-404.
Neugebauer et al., "Electrically Erasable Buried-Gate Nonvolatile Read-Only Memory", IEEE Transactions on Electron Devices, vol. ED-24, No. 5, May 1977.

Affiliated with

Also associated with

Rating

Direct-write silicon nitride EEPROM cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Direct-write silicon nitride EEPROM cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Direct-write silicon nitride EEPROM cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-645333