Fishing – trapping – and vermin destroying
Patent
1994-02-02
1995-05-09
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 86, 437188, 437974, 148DIG12, H01L 21265, H01L 2176
Patent
active
054139520
ABSTRACT:
A method for forming a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. By patterning the high temperature metal nitride layer (16) with a non-oxidizing photoresist stripper and absent a photoresist hardening step, adhesion between the high temperature metal nitride layer (16) and a dielectric layer (17, 27) subsequently formed over the high temperature metal nitride layer (16) is significantly improved. The dielectric layer (17, 27) will adhere to the high temperature metal nitride layer (16) in high temperature environments. In addition, a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. The structure is suitable for power, logic, and high frequency integrated circuit devices.
REFERENCES:
patent: 4839309 (1989-06-01), Easter et al.
patent: 5089431 (1992-02-01), Slatter et al.
patent: 5102821 (1992-04-01), Mosliki
patent: 5168078 (1992-12-01), Riesman et al.
patent: 5260233 (1993-11-01), Buti et al.
patent: 5268326 (1993-12-01), Lesk et al.
Haisma et al., Jap. J. Appl. Phys., vol. 28, No. 8, (1989) pp. 1426-1443.
D'Aragona Francesco
Pages Irenee
Sellers James A.
Wells Raymond C.
Barbee Joe E.
Chaudhuri Olik
Horton Ken
Jackson Kevin B.
Motorola Inc.
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