Direct wafer bonded 2-D CUMT array

Details Direct wafer bonded 2-D CUMT array Direct wafer bonded 2-D CUMT array

2008-10-20

2010-12-07

Dickey, Thomas L (Department: 2893)

Surgery

Diagnostic testing

Detecting nuclear, electromagnetic, or ultrasonic radiation

C310S309000, C310S300000, C257SE21002, C257SE21597

Reexamination Certificate

active

07846102

ABSTRACT:
A capacitive micromachined ultrasonic transducer (CMUT) array connected to a separate electronic unit is provided. The CMUT array includes at least two active elements, a ground element at the array end, and a non-active element having isolation trenches disposed between the active and ground elements. The active element includes a doped first silicon layer, a doped second silicon layer, and a first insulating layer disposed there between. A cavity is in the first silicon layer having a cross section that includes vertical portions disposed at each end of a horizontal portion, and the vertical portion spans from the first insulating layer through the first silicon layer such that a portion of the first silicon layer is isolated by the first insulating layer and the cavity. A membrane layer on the first silicon layer spans the cavity. A bottom electrode is disposed on the bottom of the second silicon layer.

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U. G''osele et al., “Semiconductor Wafer Bonding”, 19998, Annu. Rev. Mater. Sci. 1998. 28: pp. 215-241.

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