Direct voltage multiplier capable of being integrated into a sem

Details Direct voltage multiplier capable of being integrated into a sem Direct voltage multiplier capable of being integrated into a sem

1987-04-01

1989-01-03

Salce, Patrick R.

Electric power conversion systems

Current conversion

With voltage multiplication means

323313, 307296R, H02M 725

Patent

active

047961740

ABSTRACT:
A direct voltage multiplier which can be integrated into a semiconducting structure. The multiplier comprises a capacitor which is charged and discharged at the pace of a clock signal, with a depletion-mode MOS transistor mounted as a resistor and enabling the capacitor to be discharged. The invention makes it possible to integrate the multiplier into a semiconducting substrate and can be used, in particular, to control a VD MOS.

REFERENCES:
patent: 4016476 (1977-04-01), Morokawa et al.
patent: 4559548 (1985-12-01), Iizuka et al.
patent: 4641081 (1987-02-01), Sato et al.
New Electronics, vol. 18, No. 13, 25 juin 1985, page 25, Londres, GB; G. Peckham: "CMOS driver for high threshold MOSFETS" *En entier*.
Patents Abstracts of Japan, vol. 9, No. 212 (E-339) [1935], 29, aout 1985; & JP-A-60 74 665 (Nippon Denki K.K.) 26-04-1985.

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