Direct transient-triggered SCR for ESD protection

Electricity: electrical systems and devices – Safety and protection of systems and devices – Transient responsive

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361 56, H02H 322

Patent

active

059826010

ABSTRACT:
An electrostatic discharge (ESD) protection structure for an integrated circuit constructed on a semiconductor substrate of a first type (P) comprises a semiconductor controlled rectifier (SCR) formed on the substrate and coupled to the integrated circuit and a transient voltage oscillation circuit, the SCR including a first region of a second type (nwell) formed within the semiconductor substrate and a second region of the first type (P) positioned within the first region, the transient voltage oscillation circuit being coupled to the first region and is adapted to forward-bias a junction between the second region and the first region (P+
well junction) at least once during an ESD transient period for earlier triggering the SCR during the ESD event, thereby improving the ESD performance of the SCR ESD protection circuit used for protecting a power bus of the integrated circuit or an IC pin connected to the integrated circuit during an ESD event.

REFERENCES:
patent: 5528188 (1996-06-01), Au et al.
patent: 5541801 (1996-07-01), Lee et al.
patent: 5734541 (1998-03-01), Iniewski et al.
patent: 5852541 (1998-12-01), Lin et al.

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