Direct reading dosimeter

Details Direct reading dosimeter Direct reading dosimeter

1990-07-06

1992-05-26

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

25037014, 357 30, H01L 2714, H01L 31112, G01T 102

Patent

active

051171139

ABSTRACT:
The invention relates to a radiation dosimeter having a pair of insulated gate field effect transistors integrated into the same silicon substrate, in which each of the transistors are operable in a bias mode and a test mode. A circuit element for biasing each of the transistors, during said test mode is provide, so that one of the transistors is more sensitive to ionizing radiation than the other of the transistors. A circuit element is provided for determining, during the test mode, the difference in the threshold voltages of the transistors, whereby the difference voltage is indicative of the radiation dose, and a circuit element is provided for continuously switching the transistors between the bias mode and the test mode, whereby the period of operation of the transistors in the test mode time period is small in comparison to the period of operation of the transistors in the bias mode.

REFERENCES:
patent: 4163240 (1979-07-01), Swinehart et al.
patent: 4484076 (1984-11-01), Thomson
patent: 4678916 (1987-07-01), Thomson
patent: 4757202 (1988-07-01), East
patent: 4841349 (1989-06-01), Nakano
patent: 4976266 (1990-12-01), Huffman et al.
"Semiconductor MOSFET Dosimetry", by M. H. Reece & I. Thomson, Health Physics Society, 1988 Annual Meeting.

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