Direct pyrolysis route to GaN quantum dots

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...

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C117S004000, C117S007000, C117S008000, C117S944000

Reexamination Certificate

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07488384

ABSTRACT:
Colloidal nanocrystals or “quantum dots” of GaN are directly produced by heating amidogallium dimer, i.e., (Ga2[N(CH3)2]6), in the presence of a functional amine. The GaN quantum dots obtained, which comprise isolated particles 2-3 nm in diameter with a relative broad size distribution (e.g., 20% standard deviation) exhibit strong exciton confinement.

REFERENCES:
patent: 6177057 (2001-01-01), Purdy
patent: 7252712 (2007-08-01), Dwilinski et al.
patent: 2004/0238810 (2004-12-01), Dwilinski et al.
Benaissa, M. et al. “Nanostructured GaN: Microstructure and Optical Properties”, Physical Review B, vol. 54, No. 24, pp. 17763-17767, Dec. 15, 1996.
Brus, LE “Electron-electron and electron-hole interactions in small semiconductor crystallites: The size dependence of the lowest excited electronic state”, J. Chem. Phys 80 (9), pp. 4403-4409, May 1, 1984.
Coffer, J.L. et al., “Influence of Precursor Route on the Photoluminescense of Bulk Nanocrystalline Gallium Nitride”, Chem. Mater. 9, pp. 2671-2673, 1997.
Cumberland, RW et al., “Thermal Control of Metathesis Reactions Producing GaN and InN”, J. Phys. Chem B, 105, pp. 11922-11927, 2001.
Gonsalves, KE et al., “Optical and microstructural characterization of chemically synthesized gallium nitride nanopowders”, Appl. Phys. Lett 71 (15), pp. 2175-2177, Oct. 13, 1997.
Grocholl, L et al., “Solvothermal Azide Decomposition Route to GaN Nanoparticles, Nanorods, and Faceted Crystallites”, Chem. Mater. 13, pp. 4290-4296, 2001.
Hwang, JW et al., “Topochemical Control in the Solid-State Conversion of Cyclotrigallazane into Nanocrystalline Gallium Nitride”, Chem. Mater. 7, pp. 517-525, 1995.
Janik, JF et al., “Gallium Imide, {Ga(NH)3/2}m a New Polymeric Precursor for Gallium Nitride Powders”, American Chemical Society, 4 pgs., 1996.
Jung, WS et al. “Reaction intermediate(s) in the conversion of β-gallium oxide to gallium nitride under a flow of ammonia”, Materials Letters 57, pp. 110-114, Nov. 2002.
Liu, HL et al. “Infrared and Raman-scattering studies in single-crystalline GaN nanowires”, Chemical Physics Letters 345, pp. 245-251, Sep. 14, 2001.
Micic, OI et al., “Synthesis, structure, and optical properties of colloidal GaN guantum dots”, Applied Physics Letters, vol. 75, No. 4, pp. 478-480, Jul. 26, 1999.
Mueller, AH et al., “Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers”, Nano Letters, vol. 5, No. 6, pp. 1039-1044, 2005.
Murray, CB et al., “Syntehsis and Characterization of Monodisperse Nanocrystals and close-packed nanocrystal Assemblies”, Annu. Rev. Mater. Sci., 30, pp. 545-610, 2000.
Sardar, K et al., “New Solvothermal Routes for GaN Nanocrystals”, Advanced Materials, 16, No. 5, pp. 425-429, Mar. 5, 2004.
Sardar, K et al., “A Simple single-source precursor route to the nanostructures of Aln, GaN and InN”, J. of Materials Chemistry, vol. 15, pp. 2175-2177, 2005.
Trodahl, HJ et al., “Raman Spectroscopy of nanocrystalline and amorphous GaN”, J. of Applied Physics, 97, 084309-1 through 084309-5, 2005.
Wallace, CH et al, “Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride” Applied Physics Letters, vol. 72, No. 5, pp. 596-598, Feb. 2, 1998.
Wallace CH et al “Rapid Synthesis of Crystalline Gallium Nitride from Solid Precursors at Atmospheric Pressure” American Chemical Society, vol. 11, No. 9, pp. 2299-2301, 1999.
Wang, J et al., “Facile Azidothermal Metathesis Route to Gallium Nitride Nanoparticles”, Nano Letters, vol. 2, No. 8, pp. 899-902, plus three (3) supplemental pages, 2002.
Webster's Ninth New Collegiate Dictionary, Period Table of Elements, p. 874, Merriam-Webster, Inc., 1985.
Wells, RL et al., “Heterogeneous solution reactions between MBr3 (M=Ga, In) and Li3N. Formation and characterization of nanocrystalline GaN powders”, Eur. J. Solid State Inorg. Chem., 33, pp. 1079-1090, 1996.
Xie, Y et al., “A Benzene-Thermal Synthetic Route to Nanocrystalline GaN”, Science, vol. 272, pp. 1926-1927, Jun. 28, 1996.
Xie, Y et al., “Coexistence of wurtzite GaN with zinc blende and rocksalt studied by x-ray power diffraction and high-resolution transmission electron microscopy”, Appl. Phys Lett. 69 (3), pp. 334-336, Jul. 15, 1996.
Xu, F et al., “Single-Crystalline Gallium Nitride Microspindles: Synthensis, Charadcterization, and Thermal Stability”, Adv. Funct. Mater. 14, No. 5, pp. 464-470, May 2004.
Zhang J. et al., “Morphology and Raman scattering spectrum of GaN nanowires embedded in nanochannels of template”, J. Phys D. Appl. Phys. 35, pp. 1481-1485, 2002.
Zhao, H et al., “Route to GaN and VN Assisted by Carbothermal Reduction Process”, J. Am. Chem. Soc. 127, pp. 15722-15723, 2005.
Pan, G. et al., “A New Pyrolysis Route to GaN Quantum Dots”, Chem. Mater., 13, 4 pages, 2005.
Pan G. et al., “Room Temperature Synthesis of GaN Nanopowder”, Chem. Mater. 14, 4 pages, 2006.
Science Blog, “Novel multi-color light-emitting diodes developed”, by BJS, created May 18, 2005, 2 pages, from http://www.scienceblog.com/cms
ode/7935/print.
Los Alamos National Laboratory, “Scientists develop novel multi-color light emitting diodes”, May 17, 2005, 2 pages, from http://lanl.gov
ews/index.php?fuseaction=home.story&story—id=6597&view=print.
Physorg.com, “Scientists develop novel multi-color light-emitting diodes”, May 18, 2005, 2 pages, from http://physorg.com
ews4152.html.
Science Daily, “Scientists Develop Novel Multi-color Light-emitting Diodes”, May 18, 2005, 2 pages, from http://www.sciencedaily.com/print.php.

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