Direct patterning method of resist film using electron beam

Details Direct patterning method of resist film using electron beam Direct patterning method of resist film using electron beam

1994-12-13

1997-03-04

McFarland, Anthony

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

430296, 430942, G03F 900, G03C 500

Patent

active

056078013

ABSTRACT:
A direct patterning method using an electron beam, which-contains first and second steps. In the first step, a first beam of incident electrons accelerated at a first voltage is irradiated to an electron resist film and scanned. The first voltage is set so that the electrons penetrate the resist film to be back-scattered by a semiconductor substrate having an alignment mark and pass through the film again. Secondary electrons generated at the surface of the resist film due to the back-scattered electrons are detected by an electron detector to recognize the alignment mark. In the second step, a second beam of incident electrons accelerated at a second voltage lower than the first voltage is irradiated to the resist film and scanned by reference to the alignment mark to write a given pattern in the resist film. Since the back-scattered electrons from the first beam have sufficiently high energies, they can penetrate the resist film to reach its surface and generate many secondary electrons on the surface of the film. An electric signal produced from the secondary electrons is large in amplitude to increase the S/N, resulting in improvement in alignment accuracy.

REFERENCES:
patent: 4264711 (1981-04-01), Greeneich
patent: 4576884 (1986-03-01), Reisman
patent: 5478698 (1995-12-01), Rostoker et al.
G. Anderson et al., "E-Beam Three-Mark Registration for Vertical Wiring Processes", IBM Technical Disclosure Bulletin, vol. 27, No. 1A, pp. 256-257 Jun. 1984.
D. Holborn et al., "A pattern recognition technique using sequences of marks for registration in electron beam lithography", J. Vac. Sci. Technol., vol. 19, No. 4, pp. 1229-1233 Nov. 1981.

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