Direct, low frequency capacitance measurement for scanning...

Details Direct, low frequency capacitance measurement for scanning... Direct, low frequency capacitance measurement for scanning...

2005-02-15

2005-02-15

Nguyen, Vincent Q. (Department: 2858)

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

C324S658000

Reexamination Certificate

active

06856145

ABSTRACT:
A system and method for measuring capacitance between a probe and a semiconductor sample, which may be useful in the field of scanning capacitance microscopy (SCM). The present invention also includes a method for analyzing measured capacitance data by subtracting any changes in capacitance that are due to changes in long-range stray capacitance that occur when the probe assembly is scanned.

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patent: 6492827 (2002-12-01), Mazur et al.
University of Manitoba,Scanning Capacitance Microscopy, Jun. 16, 1999.
University of Manitoba,Scanning Probe Microscopy Laboratory, Jul. 8, 1999.
Veeco Metrology Group,Scanning Capacitance Microscopy, copyright 2001.
Veeco Metrology Group,Scanning Capacitance Microscopy for Carrier Profiling in Semiconductors, copyright 2001.

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