Direct-gap germanium-tin multiple-quantum-well electro-optical d

Details Direct-gap germanium-tin multiple-quantum-well electro-optical d Direct-gap germanium-tin multiple-quantum-well electro-optical d

1994-12-14

1996-08-20

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 19, 257103, 257190, 257201, 257616, H01L 2906, H01L 3300, H01L 310328, H01L 31117

Patent

active

055481280

ABSTRACT:
Silicon-based laser diodes, optical amplifiers, electrooptical modulators, and photodetectors in which the active region consists of a pseudomorphic GeSn multiple quantum well stack. Each quantum well is tensile-strained Ge.sub.1-x Sn.sub.x layer sandwiched between compressively strained barriers of Ge.sub.1-y Sn.sub.y with x.about.0.1, x<y and y.about.0.15. The GeSn quantum wells have a strain-induced direct gap for strongly allowed band-to-band transitions in the infrared range. The quantum well stack is grown upon a relaxed SiGeSn alloy buffer portion whose composition is graded up from a lattice match at the silicon substrate interface to a Ge or GeSn composition at buffer's top surface. Doped cladding layers are added, so that the devices have a p-i-n diode structure. The monolithic integrated Column IV devices have a rib waveguide structure, where desired, and operate typically in the 2 to 3 micron wavelength range.

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patent: 4769341 (1988-09-01), Luryi
patent: 5090790 (1992-02-01), Zucker
patent: 5107317 (1992-04-01), Takasaki
patent: 5107538 (1992-04-01), Benton et al.
patent: 5173913 (1992-12-01), Kaneno
patent: 5257276 (1993-10-01), Forouhar et al.

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