Direct FET device for high frequency application

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S706000, C257S666000

Reexamination Certificate

active

07397137

ABSTRACT:
A source mounted semiconductor device package is described which includes a semiconductor die having first and second opposing major surfaces, first and second major electrodes disposed on respective major surfaces and a control electrode disposed on the second major surface, and a thin metal clip electrically connected to the first major electrode of the die. The thin metal clip has a relatively large surface area, and package resistance which is caused by skin effect phenomenon is reduced thereby in high frequency applications.

REFERENCES:
patent: 3561107 (1971-02-01), Best et al.
patent: 3871014 (1975-03-01), King et al.
patent: 3972062 (1976-07-01), Hopp
patent: 4021838 (1977-05-01), Warwick
patent: 4454454 (1984-06-01), Valentine
patent: 4604644 (1986-08-01), Beckham et al.
patent: 4639760 (1987-01-01), Granberg et al.
patent: 4646129 (1987-02-01), Yerman et al.
patent: 5075759 (1991-12-01), Moline
patent: 5182632 (1993-01-01), Bechtel et al.
patent: 5217922 (1993-06-01), Akasaki et al.
patent: 5311402 (1994-05-01), Kobayashi et al.
patent: 5313366 (1994-05-01), Gaudenzi et al.
patent: 5367435 (1994-11-01), Andros et al.
patent: 5371404 (1994-12-01), Juskey et al.
patent: 5381039 (1995-01-01), Morrison
patent: 5394490 (1995-02-01), Kato et al.
patent: 5397921 (1995-03-01), Karnezos
patent: 5447886 (1995-09-01), Rai
patent: 5448114 (1995-09-01), Kondoh et al.
patent: 5454160 (1995-10-01), Nickel
patent: 5455456 (1995-10-01), Newman
patent: 5477087 (1995-12-01), Kawakita et al.
patent: 5510758 (1996-04-01), Fujita et al.
patent: 5512786 (1996-04-01), Imamura et al.
patent: 5532512 (1996-07-01), Fillion et al.
patent: 5554887 (1996-09-01), Sawai et al.
patent: 5578869 (1996-11-01), Hoffman et al.
patent: 5654590 (1997-08-01), Kuramochi
patent: 5703405 (1997-12-01), Zeber
patent: 5726489 (1998-03-01), Matsuda et al.
patent: 5726501 (1998-03-01), Matsubara
patent: 5726502 (1998-03-01), Beddingfield
patent: 5729440 (1998-03-01), Jimarez et al.
patent: 5734201 (1998-03-01), Djennas et al.
patent: 5739585 (1998-04-01), Akram et al.
patent: 5814894 (1998-09-01), Igarashi et al.
patent: 5841183 (1998-11-01), Ariyoshi
patent: 6051888 (2000-04-01), Dahl
patent: 6133634 (2000-10-01), Joshi
patent: 6303974 (2001-10-01), Irons et al.
patent: 6391687 (2002-05-01), Cabahug et al.
patent: 6720647 (2004-04-01), Fukuizumi
patent: 6744124 (2004-06-01), Chang et al.
patent: 2001/0048116 (2001-12-01), Standing et al.
patent: 0 966 038 (1999-12-01), None
patent: 0 978 871 (2000-02-01), None
patent: 5-129516 (1993-05-01), None
patent: 07-202064 (1995-04-01), None
patent: 11-054673 (1999-02-01), None
patent: 11195680 (1999-07-01), None
patent: 2000-243887 (2000-08-01), None
patent: WO 99/65077 (1999-12-01), None
Supplementary European Search Report dated Sep. 28, 2007 in European Patent Application No. 01922828.7.
Mosfet BGA Design Guide 2004, Fairchild Semiconductor.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Direct FET device for high frequency application does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Direct FET device for high frequency application, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Direct FET device for high frequency application will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3967791

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.