Direct coupled FET logic using a photodiode for biasing or level

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307446, 307448, 307450, 307475, 307264, 307296R, 307311, 250212, 136293, 357 19, 357 22, 357 29, H03K 1713, H03K 17687, H03K 1778

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047016469

ABSTRACT:
A direct coupled FET logic (DCFL) circuit element has an active FET with source connected to a low reference voltage and drain connected through a pull-up FET to a higher reference voltage. An input is applied to the gate of the active FET and the output is taken from its drain, the pull-up FET having its gate connected to its source. In depletion mode configuration, a photodiode is connected to the gate of the active FET, the photodiode energizable to downwardly shift the gate voltage. In enhancement mode configuration, a photodiode is connected between source and gate of the pull-up transistor and is energized to shift the gate voltage upwardly. The photodiodes are integrated with the active and pull-up FETs and are energized by light or decay radiation.

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Miura et al., "Optoelectronic Integrated AlGaAs/GaAs P-I-N/Field-Effect Transistor with an Embedded, Planar P-I-N Photodiode," Applied Physics Letters, May 1986, pp. 1461-1463.
Van Tuyl et al., "High-Speed Integrated Logic with GaAs MESFETs", IEEE JSSC, vol. SC-9, No. 5, Oct. 1974, pp. 269-276.

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