Direct contact to area efficient body tie process flow

Details Direct contact to area efficient body tie process flow Direct contact to area efficient body tie process flow

2011-06-21

2011-06-21

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257SE21385, C257SE21420, C257SE29281, C438S142000

Reexamination Certificate

active

07964897

ABSTRACT:
A process flow for fabricating shallow trench isolation (STI) devices with direct body tie contacts is provided. The process flow follows steps similar to standard STI fabrication methods except that in one of the etching steps, body tie contacts are etched through the nitride layer and STI oxide layer, directly to the body tie. This process flow provides a direct body tie contact to mitigate floating body effects but also eliminates hysteresis and transient upset effects common in non-direct body tie contact configurations, without the critical alignment requirements and critical dimension control of the layout.

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