Direct contact TAB method

Details Direct contact TAB method Direct contact TAB method

1990-01-29

1991-04-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

357 70, H01L 21603

Patent

active

050064860

ABSTRACT:
An external contact method and package wherein one embodiment includes a semiconductor die having a plurality of metallization layers including a top metallization layer that is covered by a passivating layer. At least a portion of the passivating layer is removed to expose at least a portion of the top metallization layer. Once the top metallization layer is exposed, external contact means are press-fit directly into the exposed portion. In a high powered ECL circuit, the present invention eliminates or greatly decreases voltage drop problems along the power bus lines which cause logic errors if the voltage drop is too large.

REFERENCES:
patent: 4539472 (1985-09-01), Poetker et al.
patent: 4903113 (1990-02-01), Frankeny et al.

Affiliated with

Also associated with

Rating

Direct contact TAB method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Direct contact TAB method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Direct contact TAB method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2034331