Direct channel stress

Details Direct channel stress Direct channel stress

2005-07-13

2009-02-10

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S476000, C438S487000, C438S517000, C257SE21127, C257SE21129

Reexamination Certificate

active

07488670

ABSTRACT:
An embodiment of the invention provides a semiconductor fabrication method. The method comprises forming a strained channel region in semiconductor devices. Embodiments include forming a stressor layer over an amorphous portion of the semiconductor device at an intermediate stage of fabrication. The device is masked and strain in a portion of the stressor layer is relaxed. Recrystallizing the amorphous portion of the intermediate device transfers strain from the stressor to the substrate. At least a portion of the strain remains in the substrate through subsequent device fabrication, thereby improving performance of the completed device. In other embodiments, a tensile stressor layer is formed over a first portion of the device, and a compressive stressor layer is formed over a second portion. A tensile stressor layer forms a compressive channel in a PMOS device, and a compressive stressor forms a tensile channel in an NMOS device.

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