Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2007-09-18
2007-09-18
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C257SE21511
Reexamination Certificate
active
11302863
ABSTRACT:
A semiconductor device including a contact pad and circuit metallization on the surface of an integrated circuit (IC) chip comprises a stack of protection layers over the surface of the chip. The stack consists of a first inorganic layer (303,preferably silicon nitride) on the chip surface, followed by a polymer layer (306, preferably benzocyclobutene) on the first inorganic layer (303), and finally an outermost second inorganic layer (310, preferably silicon dioxide) on the polymer layer (303). A window (301a) in the stack of layers exposes the metallization (301) of the IC. A patterned seed metal layer (307, preferably copper) is on the metallization (301) in the window and on the second inorganic layer (310) around the window. A buffer metal layer (308, preferably copper) is positioned on the seed metal layer (307). A metal reflow element (309) is attached to the buffer metal (308).
REFERENCES:
patent: 5736456 (1998-04-01), Akram
patent: 6166444 (2000-12-01), Hsuan et al.
patent: 6417089 (2002-07-01), Kim et al.
patent: 6620720 (2003-09-01), Moyer et al.
patent: 6782897 (2004-08-01), Wang et al.
patent: 6995475 (2006-02-01), Biggs et al.
patent: 2002/0043723 (2002-04-01), Shimizu et al.
patent: 2004/0151844 (2004-08-01), Zhang et al.
patent: 2006/0033198 (2006-02-01), Noma et al.
Bojkov Christo P.
Torres Orlando F.
Brady III Wade James
Coleman W. David
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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