Direct bond copper ceramic substrate for electronic applications

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428901, 428701, 428699, 428469, B32B 1504

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active

045633835

ABSTRACT:
A thin, direct bond copper ceramic substrate of high strength and good thermal conductivity and suitable for high temperature thick film processing is described. It comprises two outer layers of alumina of equal thickness and matching dimensions for bending stress equalization, and an inner copper core, itself formed of three component layers, bonded by a copper oxygen eutectic between the layers of alumina. The thickness of the copper core is held between one-tenth and one-third the thickness of the substrate. The laminated structure, which permits recycling for high temperature thick film processing, sustains stresses at working temperatures, strengthening the substrate, and provides high thermal conductivity for heat management in a high density environment.

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J. F. Burgess, C. A. Neugebauer, G. Flanagan, R. E. Moore, "Hybrid Packages by the Direct Bonded Copper Process", May 1975, Solid State Technology, pp. 42-44.
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