Diodes, and methods of forming diodes

Details Diodes, and methods of forming diodes Diodes, and methods of forming diodes

2008-06-18

2010-12-28

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

C438S576000, C257S030000, C257S244000, C257SE21353, C257SE29339

Reexamination Certificate

active

07858506

ABSTRACT:
Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer.

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