Diodes, and methods of forming diodes

Details Diodes, and methods of forming diodes Diodes, and methods of forming diodes

2008-05-28

2010-10-12

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S900000, C438S902000, C438S983000, C257S103000, C257S106000, C257S910000, C257SE21008

Reexamination Certificate

active

07811840

ABSTRACT:
Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.

REFERENCES:
patent: 3972059 (1976-07-01), DiStefano
patent: 4968389 (1990-11-01), Satoh et al.
patent: 5866301 (1999-02-01), Ide et al.
patent: 6159559 (2000-12-01), Reber et al.
patent: 6225203 (2001-05-01), Liu et al.
patent: 6816355 (2004-11-01), Watanabe
patent: 7205247 (2007-04-01), Lee et al.
patent: 2002/0094388 (2002-07-01), Fonash et al.
patent: 2005/0115946 (2005-06-01), Shim et al.
patent: 2005/0215070 (2005-09-01), Kobayashi
patent: 2006/0044239 (2006-03-01), Kamijo et al.
patent: 2006/0281330 (2006-12-01), Ahn et al.
patent: 2006/0284246 (2006-12-01), Forbes et al.
patent: 2007/0120110 (2007-05-01), Estes et al.
patent: 2007/0181931 (2007-08-01), Ahn et al.
patent: 2007/0184576 (2007-08-01), Chang et al.
patent: 2007/0190744 (2007-08-01), Hiraiwa et al.
patent: 2007/0254141 (2007-11-01), Morse et al.
patent: 2007/0269683 (2007-11-01), Chen et al.
patent: 2008/0073736 (2008-03-01), Hwang
patent: 2008/0079075 (2008-04-01), Seon et al.
patent: 2008/0087890 (2008-04-01), Ahn et al.
patent: 2008/0096363 (2008-04-01), Govindarajan
patent: 2008/0099829 (2008-05-01), Forbes et al.
patent: 2008/0101121 (2008-05-01), Kreupl
patent: 101070612 (2007-11-01), None
patent: 58178539 (1983-10-01), None
patent: 08306988 (1996-11-01), None
patent: 2007-142196 (2007-06-01), None
patent: WO2006105281 (2006-10-01), None
patent: WO2007126679 (2007-11-01), None
patent: US2009042540 (2009-12-01), None
Wilk, G.D., et al. “High-k gate dielectrics: Current status and materials properties considerations” Journal of Applied Physics, vol. 89, No. 10, May 15, 2001; pp. 5243-5275.
Taylor, S., et al. “HfO2 and ZrO2 alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition” Electronic Letters, vol. 38, No. 21, Oct. 10, 2002, pp. 1285-1286.
Datta, S., et al. “85nm Gate Length Enhancement and Depletion mode InSb Quantum Well Transistors for Ultra High Speed and Very Low Power Digital Logic Applications” IEEE, Aug. 2005, 4 pages.
Lee, Ming-Kwei, et al. “Low Leakage Current and High Dielectric Constant LPD-SiO2/MOCVD-TiO2 Film Grown on (NH4)2Sx Treated InP Substrate” 2005 International Conference on Indium Phosphide and Related Materials, IEEE, Jul. 2005, pp. 167-170.
Kahn, Harold, et al., “Anodic Oxidation During MEMS Processing of Silicon and Polysilicon: Native Oxides Can Be Thicker Than You Think” Journal of Microelectric Systems, vol. 14, No. 5, Oct. 2005, pp. 914-923.
Schwenzer, Birgit, et al. “Biologically Inspired Vapor-Diffusion Route to Metal Hydroxide Films at Low Temperatures; Synthesis, Conversion and Applications” IEEE, Mar. 2006, pp. 271-273.
Molinero, D., et al. “Properties of oxidized porous silicon as insulator material for RF applications” IEEE, 2005, pp. 131-133.

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