Diode used in reference potential generating circuit for dram

Details Diode used in reference potential generating circuit for dram Diode used in reference potential generating circuit for dram

1990-06-19

1991-08-06

Hille, Rolf

357 48, 357 4, 357 50, 357 59, H01L 2990, H01L 2704, H01L 2904, H01L 4902

Patent

active

050381830

ABSTRACT:
A p-type impurity diffusion layer is formed in a major surface region of an n-type silicon substrate. An insulating film is formed on the substrate, and a contact hole is formed in the insulating film at a position corresponding to the impurity diffusion layer. An n-type polysilicon layer is formed inside the contact hole. The p-type impurity diffusion layer and the n-type polysilicon layer constitute a diode. A p-n junction of the diode is formed on the major surface of the substrate or in the polysilicon layer above the major surface.

REFERENCES:
patent: 3953254 (1976-04-01), Valdman
patent: 4349394 (1982-09-01), Wei
patent: 4429324 (1984-01-01), Wilkens
patent: 4831424 (1989-05-01), Yoshida et al.
patent: 4870469 (1989-09-01), Nishizawa et al.
patent: 4876580 (1989-10-01), Nishizawa
"VLSI Technology", S. M. Sze, 1988, FIG. 10 p. 33.

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