Diode structure and integral power switching arrangement

Details Diode structure and integral power switching arrangement Diode structure and integral power switching arrangement

2007-08-07

2007-08-07

Owens, Douglas W. (Department: 2821)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Avalanche diode

C257S218000, C257S229000

Reexamination Certificate

active

10976436

ABSTRACT:
A diode structure having high ESD stability is described. Other embodiments provide an integral power switching arrangement having an integrated low leakage diode.

REFERENCES:
patent: 4862310 (1989-08-01), Harrington, III
patent: 4887142 (1989-12-01), Bertotti et al.
patent: 6242763 (2001-06-01), Chen et al.
patent: 2002/0079554 (2002-06-01), Okawa et al.
patent: 0822596 (1997-08-01), None

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