Diode-pumped Tm: YAG/HBr four micron laser system

Coherent light generators – Particular pumping means – Chemical

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372 70, 372 97, 372 20, H01S 3095

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active

057744904

ABSTRACT:
An HBr laser is pumped by a slave laser power oscillator which excites the (2,0) absorption band of the HBr laser, to cause it to lase around four microns. A tunable master oscillator, which is frequency locked to an HBr reference cell, seeds the slave oscillator and maintains lock-on to an absorption line in the (2,0) band of HBr.

REFERENCES:
patent: 3164545 (1965-01-01), Mattox
patent: 3440164 (1969-04-01), Aldridge
patent: 3449242 (1969-06-01), Mattox et al.
patent: 3810042 (1974-05-01), Chang et al.
patent: 3860884 (1975-01-01), Chang et al.
patent: 4003823 (1977-01-01), Baird, Jr. et al.
patent: 4007109 (1977-02-01), Baird, Jr. et al.
patent: 4127470 (1978-11-01), Baird, Jr. et al.
patent: 4145668 (1979-03-01), Mastrup et al.
patent: 4163043 (1979-07-01), Dezael et al.
patent: 4217557 (1980-08-01), Foster et al.
patent: 4310049 (1982-01-01), Kalvinskas et al.
patent: 4357309 (1982-11-01), Arnold et al.
patent: 4437980 (1984-03-01), Heredy et al.
patent: 4517676 (1985-05-01), Meinzer et al.
patent: 4566965 (1986-01-01), Olmstead
patent: 4598409 (1986-07-01), Injeyan et al.
LaCount et al., "Oxidation of Dibenzothiophene and Reaction of Dibenzothiophene 5,5-Dioxide with Aqueous Alkali," Journal of Organic Chemistry, 42(16), 1977.
Burger et al., "Symposium on Progress in Processing Synthetic Crudes and Resids," ACS (Aug. 24-29, 1975).
Yamaguchi et al., "Desulfurization of Heavy Oil and Preparation of Activated Carbon by Means of Coking Procedure," Chibakogyodaiku Kenkyui Hokoku No. 21, p. 115 (Jan. 30, 1976).

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