Diode-pumped laser system using uranium-doped Q-switch

Details Diode-pumped laser system using uranium-doped Q-switch Diode-pumped laser system using uranium-doped Q-switch

1996-01-22

1998-03-03

Lee, John D.

Coherent light generators

Particular beam control device

Q-switch

372 68, 372 75, H01S 311

Patent

active

057243727

ABSTRACT:
A laser system includes a laser resonator cavity having a resonant path and an Er,Yb:glass lasing element with an output of from about 1.5 to about 1.6 micrometers within the laser resonator cavity. A diode array optically pumps the lasing element to emit light. A Q-switch lies along the resonant path within the laser resonator cavity. The Q-switch is formed of a host material having a concentration of uranium ions therein, so as to be a saturable absorber of the light emitted by the lasing element. The Q-switch is preferably a uranium-doped fluoride such as U:CaF.sub.2, U:SrF.sub.2, or U:BaF.sub.2.

REFERENCES:
patent: 3754190 (1973-08-01), Cross
patent: 4682336 (1987-07-01), Hendrix et al.
patent: 4979180 (1990-12-01), Muncheryan
patent: 5422899 (1995-06-01), Freiberg et al.
patent: 5557624 (1996-09-01), Stultz et al.
Stultz et al, "U4+:SrF2 Efficient Saturable Absorber Q Switch For The 1.54 .mu.m Erbium:Glass Laser", Applied Physics Letters, 64(8), 21 Feb. 1994, pp. 948-950.

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