Active solid-state devices (e.g. – transistors – solid-state diode – Tunneling pn junction device
Reexamination Certificate
2006-04-04
2006-04-04
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Tunneling pn junction device
C257S281000, C257S620000
Reexamination Certificate
active
07023027
ABSTRACT:
A small semiconductor package having two electrodes, which can be produced at reduced cost and which features high reliability. The package has a structure in which an anode and a cathode are arranged on one surface of a semiconductor chip, each electrode having a bump electrode for connecting the electrode to an external substrate. An insulating resin is provided on the surface of the semiconductor chip and on the surfaces of the bump electrodes, except at least for the connection portions to the external substrate.
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Ichinose Yasuharu
Saeki Junichi
Suzuki Shuichi
Teramae Toshiya
Antonelli, Terry Stout and Kraus, LLP.
Cao Phat X.
Renesas Technology Corp.
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