Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1998-06-17
2000-05-02
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
333 13, 333 172, 333 20, 333 65, 455 81, 455217, 438 25, 438 27, 438 55, 257458, 257433, 257434, H01L 2980
Patent
active
060575697
ABSTRACT:
The present invention provides a diode limiter device in which a first penetration hole is formed on a wall surface of an H surface; the PIN diode is supported by the PIN diode mounting side of the post with the PIN diode being electrically connected to the waveguide at the first penetration hole; a second penetration hole is formed on the other wall surface opposite to the wall surface; a second conductive boss which grasps the PIN diode with the post is electrically insulated and supported with respect to the second penetration hole; a wiring substrate with the detection diode and the resistor mounted thereon is installed; and the wiring substrate is supported in the second penetration hole by a third boss, thereby improving productivity and reducing cost.
REFERENCES:
patent: 4673896 (1987-06-01), Brady et al.
patent: 4875022 (1989-10-01), Berry et al.
patent: 5128636 (1992-07-01), Furutani et al.
V.J. Higgins et al., "Semiconductor Limiters and Microwave Duplexing Device", Microwave Journal, vol. 9, pp. 47-55 (Apr. 1966).
Kisanuki Ikuo
Tomita Manabu
Mintel William
New Japan Radio Co. Ltd.
LandOfFree
Diode limiter device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Diode limiter device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diode limiter device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1595763