Diode-like composite semiconductor device

Details Diode-like composite semiconductor device Diode-like composite semiconductor device

2008-01-16

2010-11-02

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S076000, C257SE27016, C257SE29100

Reexamination Certificate

active

07825435

ABSTRACT:
A silicon-made low-forward-voltage Schottky barrier diode is serially combined with a high-antivoltage-strength high-electron-mobility transistor made from a nitride semiconductor that is wider in bandgap than silicon. The Schottky barrier diode has its anode connected to the gate, and its cathode to the source, of the HEMT. This HEMT is normally on. The reverse voltage withstanding capability of the complete device depends upon that between the drain and gate of the HEMT.

REFERENCES:
patent: 2006/0081897 (2006-04-01), Yoshida
patent: 2001332747 (2001-11-01), None
patent: 2004022639 (2004-01-01), None
patent: 2005235985 (2005-09-01), None

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