Diode laser with tunnel barrier layer

Details Diode laser with tunnel barrier layer Diode laser with tunnel barrier layer

1994-11-28

1996-04-16

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, H01S 319

Patent

active

055090249

ABSTRACT:
Semiconductor lasers with thin tunnel barrier layers inserted between P cladding and P confining/active layers. The tunnel barrier layer creates an energy barrier which reduces the leakage of electrons from the active region, if the laser is a double heterostructure laser, or the confining region, if the laser is a quantum well, either single or multiple, laser into the cladding layer.

REFERENCES:
patent: 5068867 (1991-11-01), Hasenberg et al.
patent: 5079601 (1992-01-01), Esaki et al.
patent: 5225692 (1993-07-01), Takeuchi et al.
patent: 5289486 (1994-02-01), Iga et al.

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