Diode having vertical structure and method of manufacturing...

Details Diode having vertical structure and method of manufacturing... Diode having vertical structure and method of manufacturing...

2008-05-13

2008-05-13

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000

Reexamination Certificate

active

07371597

ABSTRACT:
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

REFERENCES:
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5929466 (1999-07-01), Ohba et al.
patent: 6100545 (2000-08-01), Chiyo et al.
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6329216 (2001-12-01), Matsumoto et al.
patent: 6335217 (2002-01-01), Chiyo et al.
patent: 6358770 (2002-03-01), Itoh et al.
patent: 6479839 (2002-11-01), Nikolaev et al.
patent: 6495894 (2002-12-01), Shibata et al.
patent: 6500689 (2002-12-01), Uemura et al.
patent: 6508878 (2003-01-01), Kim et al.
patent: 6614060 (2003-09-01), Wang et al.
patent: 6639925 (2003-10-01), Niwa et al.
patent: 6693935 (2004-02-01), Tojo et al.
patent: 6878563 (2005-04-01), Bader et al.
patent: 2003/0205717 (2003-11-01), Khare et al.
patent: 2004/0051105 (2004-03-01), Tsuda et al.
Continuous-Wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates Obtained by Laser Liftoff, IEEE Journal on Selected Topics in Quantum Electronics, vol. 7, No. 2, Mar./Apr. 2001.
Continuous-Wave InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates, Applied Physics Letters vol. 78, No. 9, Feb. 26, 2001.
The integration of InxGa1−xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off, Jpn. J. Appl. Phys. vol. 39 (2000) pp. L 1203-L 1205, Part 2, No. 12A, Dec. 1, 2000.

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