Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient
Patent
1995-11-24
1998-09-22
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
257657, H01L 29167, H01L 29207, H01L 29227, H01L 2936
Patent
active
058118730
ABSTRACT:
A diode has a semiconductor layer which has a predetermined impurity concentration, and in which the rate of extension of a depletion layer during a reverse recovery operation gradually decreases so as to decrease the rate of change in reverse recovery current. In addition, the number of excess carriers accumulated in the semiconductor layer during a forward operation is decreased so as to decrease reverse recovery charge. The diode generates less surge voltage and loss and can comply with operating conditions of various forward current densities, and various reverse voltages.
REFERENCES:
patent: 3921192 (1975-11-01), Goronkin et al.
patent: 4594602 (1986-06-01), Iimura et al.
patent: 5627402 (1997-05-01), Takemura
Patent Abstracts of Japan, JP 62-115880, May 27, 1987.
Patent Abstracts of Japan, JP 58-216473, Dec. 16, 1983.
Patent Abstracts of Japan, JP 4-67687, Mar. 3, 1992.
"Analysis of Soft Recovery of Diode and the 2 Step Gradient Structure" by H. Hagino & N. Soejima The Transactions of the Institute of Electrical Engineers of Japan, vol. 115-C, No. 6, published on May 20, 1995.
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan V.
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