Diode having low forward voltage drop

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With means to increase breakdown voltage

Reexamination Certificate

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Details

C257SE29013, C257S580000

Reexamination Certificate

active

07491982

ABSTRACT:
A semiconductor device, including: a semiconductor substrate of the first conductivity type having a first surface and a second surface; a base region of the second conductivity type formed on the first surface of the semiconductor substrate; a guard ring region of the second conductivity type formed around the base region, and having the second type impurity of which concentration is lower than that of the base region; a first electrode formed on the base region; and a second electrode formed on the second surface of the semiconductor substrate, further including a base peripheral region formed around the base region and being connected to the base region, wherein the base peripheral region is deeper than the base region and has the substantially constant depth, and the concentration of the second conductivity type impurity included in the base peripheral region is lower than that included in the base region.

REFERENCES:
patent: 6177713 (2001-01-01), Aono et al.
patent: 38 32 750 (1990-03-01), None
patent: 0361319 (1990-04-01), None
patent: 7-14805 (1995-01-01), None
patent: 8-306937 (1996-11-01), None
patent: 3444082 (2003-06-01), None
patent: 2003-197898 (2003-07-01), None
patent: 2003197898 (2003-07-01), None

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