Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Reexamination Certificate
2006-06-27
2006-06-27
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
C257S094000, C257S096000
Reexamination Certificate
active
07067849
ABSTRACT:
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
REFERENCES:
patent: 5798537 (1998-08-01), Nitta
patent: 5880486 (1999-03-01), Nakamura et al.
patent: 5939735 (1999-08-01), Tsutsui et al.
patent: 6057565 (2000-05-01), Yoshida et al.
patent: 6078064 (2000-06-01), Ming-Jiunn et al.
patent: 6130147 (2000-10-01), Major et al.
patent: 6185238 (2001-02-01), Onomura et al.
patent: 6365429 (2002-04-01), Kneissl et al.
patent: 6456638 (2002-09-01), Fukunaga
patent: 6468902 (2002-10-01), Kawai
patent: 6488767 (2002-12-01), Xu et al.
patent: 6518602 (2003-02-01), Yuasa et al.
patent: 6526083 (2003-02-01), Kneissl et al.
patent: 6744196 (2004-06-01), Jeon
patent: 6841802 (2005-01-01), Yoo
patent: 6949395 (2005-09-01), Yoo
patent: 2002/0117672 (2002-08-01), Chu et al.
patent: 2003/0015713 (2003-01-01), Yoo
patent: 2003/0077847 (2003-04-01), Yoo
patent: 2003/0080344 (2003-05-01), Yoo
patent: 2003/0189212 (2003-10-01), Yoo
patent: 2004/0169181 (2004-09-01), Yoo
patent: 2004/0169189 (2004-09-01), Jeon
patent: 2005/0093004 (2005-05-01), Yoo
patent: 2006/0006400 (2006-01-01), Yoo
Continuous-Wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates Obtained by Laser Liftoff, IEEE Journal on Selected Topics in Quantum Electronics, vol. 7, No. 2, Mar./Apr. 2001.
Continuous-Wave InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates, Physics Letters vol.78, no.9, Feb. 26, 2001.
The integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off, Jpn. J. Appl. Phys. vol. 39 (2000) pp. L 1203-L 1205, Part 2, No. 12A, Dec. 1, 2000.
LG Electronics Inc.
McKenna Long & Aldridge LLP
Schillinger Laura M.
LandOfFree
Diode having high brightness and method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Diode having high brightness and method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diode having high brightness and method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3636006