Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2005-05-17
2005-05-17
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S106000, C438S328000, C438S983000
Reexamination Certificate
active
06894318
ABSTRACT:
The present invention provides a diode200that includes a substrate215doped with a first type dopant and a double implanted guard ring245located within the substrate and doped with a second type dopant opposite the first type dopant and having a first doped profile region245aand a second doped profile region245b. The present invention also includes a method of manufacturing this diode and an integrated circuit that utilizes this diode200within a CMOS and bipolar transistor integrated circuit600.
REFERENCES:
patent: 4134123 (1979-01-01), Shannon
patent: 5119160 (1992-06-01), Hall
patent: 5907179 (1999-05-01), Losehand et al.
patent: 6426541 (2002-07-01), Chang et al.
patent: 20040150072 (2004-08-01), Schnitt et al.
Chuang Ming-Yeh
Loftin William C.
Montgomery Scott K.
Brady III Wade James
Lee Eddie
Owens Douglas W.
Tung Yingsheng
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