Diode formed in a surface silicon layer on an SOI substrate

Details Diode formed in a surface silicon layer on an SOI substrate Diode formed in a surface silicon layer on an SOI substrate

1999-03-30

2000-04-18

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With groove to define plural diodes

257507, 257653, H01L 2358, H01L 2906, H01L 310352

Patent

active

06051874&

ABSTRACT:
A diode is formed by forming a PN junction region 6 with a p region 5 formed on a buried oxide film 19 side and an n region 7 formed on the surface side in a surface silicon layer 3 which is isolated by the buried oxide film 19 of an SOI substrate 1, providing a lightly doped p region 33 on one end side of the PN junction region 6 and a lightly doped n region 31 on an other end side, forming a heavily doped p region 13 and a heavily doped n region 9 at the respective surface portions of the lightly doped p region 33 and the lightly doped n region 31 in such a manner as not to contact the PN junction region 6, and providing two metal plates which respectively connect to the heavily doped p region 13 and the heavily doped n region 9.

REFERENCES:
patent: 4057824 (1977-11-01), Woods
patent: 5841172 (1998-11-01), Morishita et al.

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