Diode device and transistor device

Details Diode device and transistor device Diode device and transistor device

2006-11-14

2006-11-14

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

C257S127000, C257S168000, C257S173000, C257S409000, C257S484000, C257S605000, C257SE29012

Reexamination Certificate

active

07135718

ABSTRACT:
A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the outermost one reaches these relay diffusion layers, and then the outer guard ring portions. The width of the distance between the guard ring portions is shorter where the relay diffusion layers are provided. For the width of the relay diffusion layers, the depletion layer reaches the outer guard ring portions with a lower voltage than the conventional structure.

REFERENCES:
patent: 3335296 (1967-08-01), Smart
patent: 3391287 (1968-07-01), Kao et al.
patent: 3541403 (1970-11-01), Lepselter et al.
patent: 4602266 (1986-07-01), Coe
patent: 4754310 (1988-06-01), Coe
patent: 5017976 (1991-05-01), Sugita
patent: 5075739 (1991-12-01), Davies
patent: 5081509 (1992-01-01), Kozaka et al.
patent: 5081510 (1992-01-01), Ohtsuka et al.
patent: 5216275 (1993-06-01), Chen
patent: 5233215 (1993-08-01), Baliga
patent: 5241195 (1993-08-01), Tu et al.
patent: 5438215 (1995-08-01), Tihanyi
patent: 5525821 (1996-06-01), Harada et al.
patent: 5608244 (1997-03-01), Takahashi
patent: 5763915 (1998-06-01), Hshieh et al.
patent: 5883411 (1999-03-01), Ueda et al.
patent: 5962893 (1999-10-01), Omura et al.
patent: 6069371 (2000-05-01), Omura et al.
patent: 6084264 (2000-07-01), Darwish
patent: 6184545 (2001-02-01), Werner et al.
patent: 6204097 (2001-03-01), Shen et al.
patent: 6236099 (2001-05-01), Boden, Jr.
patent: 6340836 (2002-01-01), Shikata
patent: 6404032 (2002-06-01), Kitada et al.
patent: 6445054 (2002-09-01), Traijkovic et al.
patent: 6507050 (2003-01-01), Green
patent: 6509607 (2003-01-01), Jerred
patent: 6667515 (2003-12-01), Inoue
patent: 6707128 (2004-03-01), Moriguchi et al.
patent: 2001/0052617 (2001-12-01), Kitada et al.
patent: 2003/0042555 (2003-03-01), Kitada et al.
patent: 198 20 734 (1999-11-01), None
patent: 0 124 139 (1984-11-01), None
patent: 0 631 320 (1994-12-01), None
patent: 1 063 705 (2000-12-01), None
patent: 1 076 363 (2001-02-01), None
patent: 1 130 653 (2001-09-01), None
patent: 1 139 433 (2001-10-01), None
patent: 1 289 022 (2003-03-01), None
patent: 2000-312011 (2000-11-01), None
patent: 2001-244462 (2001-09-01), None
patent: 2001-284604 (2001-10-01), None
patent: 2000-077682 (2002-03-01), None
patent: 2003-69017 (2003-03-01), None
European Search Report dated Jul. 29, 2004.
Japanese Office Action issued on Sep. 5, 2006 by the Japanese Patent Office for Japanese Patent application No. 2002-288317.

Affiliated with

Also associated with

Rating

Diode device and transistor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Diode device and transistor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Diode device and transistor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3687646